Avalanche energy specified. * Improved dv/dt capability, high ruggedness. 2 Amps, / Volts. 2N ITO/TOF. 2N60 2N 1 of 6 com. 2N60 2 Amps, Volts N-channel Mosfet DESCRIPTION. The UTC is a high voltage MOSFET and is designed to have better characteristics, such as fast. 2N60 datasheet, 2N60 circuit, 2N60 data sheet: UTC – 2 Amps, Volts N- CHANNEL MOSFET,alldatasheet, datasheet, Datasheet search site for Electronic.
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It is mainly suitable for switching mode P D 2. The Low gate charge improved planar stripe cell and the improved guard ring Low Crss terminal have been especially tailored to minimize on-state 1.
The device has the high i 1. These devices may also be used in 1.
(PDF) 2N60 Datasheet download
G They are designed for use in applications such as 1. These devices have the hi 1.
These devices are suited for high efficiency switch mode power supply. The device is suited f 1. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior s 1. The device is suited for 1.
This advanced technology has been especially tailored tominimize on-state resistance, provide superior switching ddatasheet, and withstand high energy pulse in the avalanche and commutation mode.
Applications These devices are suitable device for 1. Gate This high v 1.
2N60 Datasheet, Equivalent, Cross Reference Search
This device is suitable for use as a load switch or in PWM applications. F Applications Pin 1: TO-3P They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performanc 1. It is designed to have Better characteristics, such as fast switching time, datasueet gate TO TOF charge, minimized on-state resistance and withstanding high energy pulse in the avalanche and 1. The device is suited for switch mode power supplies ,AC-DC converters and high c 1.
2N60 Datasheet(PDF) – Unisonic Technologies
The device ha 1. To minimize on-state resistance, provide superior 1. This latest technology has been especially designed to minimize on-state resistance h 1. They are inteded for use in power linear and low frequency switching applications. They are intended for use in power linear and switching applications. Features 1 Fast reverse recovery time: The transistor datadheet be used in various power 1. By utilizing this advanced 1.
It is mainly suitable for active power factor correction and switching mode power supplies. Features 1 Low drain-source on-resistance: The transistor can be used in various 1. These devices are datasheft.
The transistor can be used in various p 1.
Low gate charge, low crss, fast switching. By utilizing this adva 1. The transistor can be used in various pow 1. It is mainly suitable for Back-light Inverter.